Monolithically integrated semiconductor element, use thereof and method for producing such a semiconductor element
Invention DE4332653 (C1)
Germany DE4332653, September 1994
|Inventors||ALAVI, Mani Dipl.-Ing. Dr.rer.nat. [DE];
FABULA, Thomas Dipl.-Phys. [DE];
SCHUMACHER, Axel Dipl.-Phys. [DE];
WAGNER, Hans-Joachim Dipl.-Phys. [DE]
The monolithically integrated semiconductor element has a bar structure arranged over a diaphragm and located on support webs. The diaphragm, support webs and bar structure are integrally formed from a common semiconductor substrate and have edge faces which are defined by differential etching rates in different crystal orientations of the semiconductor substrate. Such a semiconductor element is produced by applying a mask layer onto opposite surfaces of a semiconductor substrate having a predetermined crystal orientation, subsequent uniform planar destruction or partial destruction of the crystal structure followed by anisotropic etching until the bar structure has been uncovered by etching and a diaphragm with a predetermined thickness remains under the bar. A monocrystalline silicon substrate with a <110> surface crystal orientation has proved particularly suitable. The monolithically integrated semiconductor element according to the invention is, in particular, suitable for use as a sensor or electromechanical transducer.
Microsystem Technologies, Volume 1, Issue 4, pp 191-195
Monolithic bridge-on-diaphragm structure for pressure sensor applications
Hahn-Schickard-Gesellschaft für Angewandte Forschung e.V.