Resonant Microsensors

Invited paper “Sensors and Materials”   Special Issue : Resonant Microsensors   Paper Analytical and finite element modeling of resonant silicon microsensors Authors: Thomas Fabula and Stephanus Büttgenbach Year of publication: 1997 Volume: 9 Number: 8 Pagination: 501-519   Keywords beam-on-diaphragm, pressure sensor, electromechanical coupling factor, finite-element modeling, modal analysis, mode coupling, piezoelectric thin films, resonant…

Silicon BOD-structures

Monolithic bridge-on-diaphragm microstructures   Abstract Monolithic bridge-on-diaphragm (BOD) microstructures for sensor applications were fabricated by means of laser machining and anisotropic etching techniques. The pressure-frequency-characteristic was measured by acoustical excitation of the microbridge to resonant vibrations and optical detection of the resonance frequency. In the pressure range between 0.8 bar and +1.0 bar the pressure-frequency-characteristic is…

Monolithic BOD-structure

Monolithic bridge-on-diaphragm structure for pressure sensor applications     Authors H.-J. Wagner, A. Schumacher, M. Alavi, T. Fabula, B. Schmidt Journal Microsystem Technologies, vol. 1, no. 4, pp. 191-195, 1995 Microsystem Technologies – Volume 1, Issue 4 , pp 191-195 Abstract Monolithically clamped bridge-on-diaphragm (BOD) structures for pressure sensor applications were fabricated by means of Nd: YAG-laser micromachining and anisotropic…

Micro System Technologies 94

Herbert Reichl & Anton Heuberger (Herausgeber):   Micro System Technologies ’94. 4th International Conference, Berlin 1994   Contribution Monolithic Bridge-on-Diaphragm Microstructures for Sensor-Applications. Authors A. Schumacher, M. Alavi, T. Fabula, B. Schmidt, H.-J. Wagner Laser system setup Simulation results Experimental measurements Further information https://link.springer.com/journal/542/volumes-and-issues/1-1   Monolithic Bridge-on-Diaphragm Microstructures Silicon BOD-structures Monolithic BOD-structure

MEMS Patent

MEMS patent Monolithically integrated semiconductor element, use thereof and method for producing such a semiconductor element   Invention DE4332653 (C1) Monolithisch integriertes Halbleiterelement, dessen Verwendung sowie Verfahren zur Herstellung eines solchen Halbleiterelements Germany DE4332653, September 1994 Inventors Erfinder ALAVI, Mani – Dipl.-Ing. Dr.rer.nat. [DE]; FABULA, Thomas – Dipl.-Phys. [DE]; SCHUMACHER, Axel – Dipl.-Phys. [DE]; WAGNER, Hans-Joachim – Dipl.-Phys. [DE]  …